Groove Schottky barrier diode

Abstract

The problem of the present invention is to achieve a smooth electric field inside the terminal portion of the trench-type Schottky barrier diode and suppress the voltage drop. The present invention is a trench-type Schottky barrier diode having: a plurality of first trenches (21) of a rectifier (61); at least one second trench (22) of a terminal portion (62) on the outside of the rectifier (61); at least one third trench (23) on the outside of the second trench (22) of the terminal portion (62); an insulating film (32) formed on the inner wall of each of the first trenches (21) to the third trenches (23); a conductive layer (31) formed on the inner side of the insulating film; and a metal electrode (41) that is Schottky connected to the N-type semiconductor layer (11) in the rectifier, wherein the conductive layer (31) inside each of the first trenches (21) and the second trenches (22) is electrically connected to the metal electrode (41), and the conductive layer (31) inside the third trench (23) is formed to float relative to the metal electrode (41).

Images