Bipolar transistors
TW202641043APending Publication Date: 2026-10-01GLOBALFOUNDRIES US INC
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Patent Information
- Application Number
- TW114145355
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-20
- Filing Date
- 2025-11-20
- Publication Date
- 2026-10-01
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Figure TWG2TA001078531_001 
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors and methods of manufacture. The structure includes: a first transistor having an intrinsic base, an extrinsic base and an emitter; and a second transistor having an intrinsic base, an extrinsic base and an emitter. The extrinsic base of the first transistor and the extrinsic base of the second transistor have a common extrinsic base layer with a first dopant type for the first transistor and a second dopant type for the second transistor.
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