Semiconductor device and method for fabricating the same

Abstract

A method for fabricating a semiconductor device includes the steps of first forming a gate material layer on a substrate, patterning the gate material layer to form a first gate structure, a second gate structure, and a dummy gate between the first gate structure and the second gate structure, forming an interlayer dielectric (ILD) layer on the first gate structure, the second gate structure, and the dummy gate, forming an opening in the ILD layer to expose the dummy gate, and then forming a source electrode in the opening to connect to the dummy gate.

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