Boron passivation for gate oxide in transistors

Abstract

Disclosed herein is a method to create a transistor such as a boron-passivated interface in a silicon carbide power metal oxide semiconductor field effect transistors (MOSFET). The method includes passivating a top interface of a substrate, such as a silicon carbide substrate, with a diborane treatment, depositing an oxide cap layer on the boron-passivated interface, performing a nitridation of the oxide cap layer, and depositing a gate oxide layer on the nitrided cap layer. In another aspect, a boron-passivated interface in a transistor is described.

Images