Semiconductor devices
TW202641055APending Publication Date: 2026-10-01NUVOTON TECH CORP JAPAN
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Patent Information
- Application Number
- TW114147904
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-09
- Filing Date
- 2025-12-08
- Publication Date
- 2026-10-01
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Abstract
A semiconductor device (100) includes: a gate field plate (131) electrically connected to a gate electrode (130) and extending in a direction from the gate electrode (130) toward a drain electrode (150) and covering the drain electrode side of a p-type semiconductor layer (120); and a source field plate (142) electrically connected to a source electrode (140) and extending in a direction from the source electrode (140) toward a drain electrode (150) and covering the drain electrode side of the gate field plate (131), wherein the source field plate (142) extends from the source electrode (140) to a position close to the drain electrode (150) at least 2.5 μm from the drain electrode side of the gate field plate (131).
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