Semiconductor device

Abstract

An example semiconductor device comprises an active pattern on a substrate, a first channel structure and a second channel structure spaced apart from each other on the active pattern, a gate electrode on the first channel structure and the second channel structure and a separation structure provided between the first channel structure and the second channel structure. Each of the first channel structure and the second channel structure includes a plurality of semiconductor patterns. A level of an upper surface of the separation structure is higher than that of an upper surface of an uppermost semiconductor pattern among the plurality of semiconductor patterns. The gate electrode provided between the plurality of semiconductor patterns is in contact with the separation structure.

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