Semiconductor structures and semiconductor devices and methods of forming the same

TW202641064APending Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114137128
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-07-31
Filing Date
2025-09-26
Publication Date
2026-10-01

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    Figure TWG2TA001078315_003
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Abstract

A semiconductor device is provided and includes a first base fin and a second base fin extending from a substrate, an isolation feature disposed between the first base fin and the second base fin, a first dummy epitaxial layer disposed on the first base fin, a second dummy epitaxial layer disposed on the second base fin, a first insulator layer over the first dummy epitaxial layer, a second insulator layer over the second dummy epitaxial layer, a first source / drain feature disposed on the first insulator layer, a second source / drain feature disposed on the second insulator layer. A thickness of the first dummy epitaxial layer measured from a top surface of the first base fin is smaller than a thickness of the second dummy epitaxial layer measured from a top surface of the second base fin.
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