TFT substrate and manufacturing method thereof

Abstract

A thin film transistor substrate includes a plurality of thin film transistors, wherein one thin film transistor includes a substrate, an oxide semiconductor layer, a gate structure, an oxidized metal layer, a source and a drain. The oxide semiconductor layer is disposed on the substrate and includes a first region and two second regions, wherein the first region is located between the two second regions, and the current density of the two second regions is greater than the current density of the first region. The gate structure is correspondingly arranged on the first region of the oxide semiconductor layer. The oxidized metal layer is disposed on the oxide semiconductor layer and the gate structure, and contacts the oxide semiconductor layer and the gate structure. The source and the drain are arranged on the oxide semiconductor layer and pass through the oxidized metal layer to contact the oxide semiconductor layer, wherein the oxidized metal layer extends from one of the second regions through the gate structure to the other one of the second regions.

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