Memory device

Abstract

The semiconductor of the present invention extends along a first surface including intersecting first and second directions, and has an annular shape. It has a first portion on the first direction side and a second portion on the side opposite to the first direction. A second insulator is located on the first portion of the semiconductor. A second insulator is located on the second portion of the semiconductor. A first conductor has a first portion, and this first portion is disposed on the second insulator and in a third direction intersecting the first and second directions, separating the second insulator facing the first portion of the semiconductor. The second conductor is in contact with the first conductor. A third conductor is in contact with the first portion of the semiconductor. The third insulator and the first portion of the semiconductor together sandwich the third conductor. A fourth conductor and the third conductor together sandwich the third insulator.

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