Semiconductor device with bottom insulating layer and method for fabricating the same

TW202641074APending Publication Date: 2026-10-01NAN YA TECH
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Patent Information

Application Number
TW114129198
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-28
Filing Date
2025-07-31
Publication Date
2026-10-01

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Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an indentation inwardly positioned in the substrate; a bottom insulating layer including a lower portion conformally positioned along the indentation, and an upper portion conformally positioned on the lower portion and within the indentation; a first top insulating layer conformally positioned on the upper portion and within the indentation; and a first filling layer positioned on and surrounded by the first top insulating layer. A sidewall of the indentation is substantially vertical.
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