Semiconductor substrates and their manufacturing methods, semiconductor substrate manufacturing apparatus, and semiconductor devices

Abstract

The semiconductor substrate includes a template substrate and a first semiconductor portion located above a first seed region and a growth inhibition region. The first semiconductor portion includes a first wing located above the aforementioned growth inhibition region. The first wing has a first nitride semiconductor layer, an aluminum-based semiconductor layer located on the first nitride semiconductor layer, and a second nitride semiconductor layer located on the aluminum-based semiconductor layer. The upper surface of the second nitride semiconductor layer has a lower silicon concentration compared to the upper surface of the first nitride semiconductor layer.

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