Semiconductor structure having upper surface and method of fabrication

Abstract

Semiconductor structures and methods of fabrication are provided. A method includes forming a trench over a semiconductor substrate, wherein the trench has a trench sidewall; forming a semiconductor liner on the trench sidewall; converting at least a portion of the semiconductor liner to a metal-semiconductor intermetallic; forming a first conductive contact in the trench, wherein the first conductive contact contacts the metal-semiconductor intermetallic; and forming a second conductive contact adjacent to the metal-semiconductor intermetallic.

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