Semiconductor devices and manufacturing methods thereof

Abstract

A semiconductor device with superior properties and a method for manufacturing the same are provided. The semiconductor device includes: an oxide semiconductor layer; a first wiring; a gate insulating layer disposed between the first wiring and the oxide semiconductor layer, and comprising at least one element selected from oxygen or nitrogen, and a second element; an insulating layer disposed between the first wiring and the gate insulating layer, and comprising at least one element selected from oxygen, chlorine, and fluorine, and a third element; and a barrier conductive layer disposed between the first wiring and the insulating layer. A first value is the absolute value of the difference between the first electronegativity of the element with the highest atomic concentration among oxygen and nitrogen contained in the gate insulating layer and the second electronegativity of the second element. A second value is the absolute value of the difference between the third electronegativity of the element with the highest atomic concentration among oxygen, chlorine, and fluorine contained in the insulating layer and the fourth electronegativity of the third element contained in the insulating layer. The second value is larger than the first value.

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