Semiconductor devices

Abstract

The objective of this invention is to provide a semiconductor device capable of suppressing gate-induced drain leakage current-random telegraph signal (GIDL-RTS). A first semiconductor device according to one embodiment of this disclosure includes: a semiconductor substrate having an active region and a device separation region surrounding the active region; a well region disposed on the active region of the semiconductor substrate; a pair of diffusion layers equally spaced apart from the well region and disposed on the active region of the semiconductor substrate; a gate insulating film disposed throughout the active region and the device separation region; a gate electrode disposed on the well region between the pair of diffusion layers, separated by the gate insulating film; a plurality of first conductors equally spaced apart from the gate insulating film and disposed across the active region and the device separation region; and a second conductor electrically connecting at least one diffusion layer to one or more first conductors.

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