Semiconductor structure and method of forming the same

Abstract

Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes forming a patterned hard mask over a substrate, the patterned hard mask comprising an opening exposing a portion of the substrate, removing the portion of the substrate, thereby forming a trench in the substrate, epitaxially forming a first semiconductor layer in and over the trench, the first semiconductor layer and the substrate comprising different compositions, selectively removing the patterned hard mask after the epitaxially forming of the first semiconductor layer, planarizing the first semiconductor layer and the substrate, forming a second semiconductor layer on the first semiconductor layer and the substrate after the planarizing, and forming an n-type gate-all-around (GAA) transistor over the first semiconductor layer and the substrate.

Images