Semiconductor device and method for manufacturing semiconductor device

Abstract

This specification relates to semiconductor devices and methods for manufacturing semiconductor devices. One embodiment of the method for manufacturing a semiconductor device may include the following steps: forming a thin film structure by alternately stacking sacrificial layers and insulating layers on a substrate; forming a through-hole in the thin film structure; forming a charge storage structure on the inner wall of the through-hole; forming a channel layer on the charge storage structure; and implanting impurities into the channel layer, wherein in one embodiment, the impurities are implanted by vapor phase doping.

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