Optoelectronic component packaging method
Patent Information
- Application Number
- TW114110144
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-18
- Publication Date
- 2026-10-01
- Estimated Expiration
- 2045-03-17
AI Technical Summary
Conventional solar cell packaging methods fail to protect cells from corrosion by acid/alkali electrolytes, reduce reaction area, obstruct light penetration, and hinder optimal ohmic contact metal selection, leading to decreased hydrogen/oxygen production efficiency and durability.
A packaging method involving a solar cell wafer adhered to a carrier plate with conductive paste, gold wire connection, and optical-grade silicone coating, allowing photocatalyst deposition on metal layers for direct immersion in electrolytes, maintaining light exposure and enhancing electron transfer.
The method protects solar cells from corrosion, increases hydrogen/oxygen production area and efficiency, and reduces costs by ensuring unobstructed light exposure and optimal metal contact, thereby improving durability and efficiency.
Smart Images

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Abstract
Description
[Technical Field]
[0001] This invention relates to a method for packaging optoelectronic components, and more particularly to a packaging method that allows solar cells to be directly immersed in acid / alkali electrolytes, especially to a solar cell whose structure is not easily etched and damaged by acid / alkali electrolytes during the hydrogen / oxygen production process. [Previous Technology]
[0002] Taiwan's main sources of hydrogen energy include catalytic decomposition of fossil fuels, recycling of industrial byproducts, and the production of green hydrogen through water electrolysis using renewable energy. As Taiwan is actively promoting the development of renewable energy, the future use of surplus electricity from renewable energy sources to produce hydrogen holds enormous potential.
[0003] Traditional water electrolysis for hydrogen production requires an external power source to provide electrical energy and to perform the water electrolysis reaction on the electrode surface. However, photoelectrochemical water splitting (PEC) technology uses the energy of light to directly excite electrons and holes on semiconductor materials, thereby triggering the water decomposition reaction to generate hydrogen and oxygen. This direct immersion in water not only simplifies the system structure but also reduces energy loss during energy conversion, thus improving overall efficiency. However, how to prevent the solar cells from being corroded and damaged by prolonged immersion in acid / alkali electrolytes is an urgent problem to be solved. Furthermore, conventional technology has the following shortcomings: 1. Small hydrogen / oxygen production area: In order to avoid contact with the electrolyte and cause the positive and negative electrodes of the solar cell 6 to conduct, conventional technology coats a ring of insulating adhesive 61 around the solar cell 6 (as shown in Figure 10). The coating area includes part of the front side of the solar cell 6, which reduces the reaction area between the solar cell 6 and the electrolyte. Furthermore, because the hydrogen production reaction occurs on the surface of the solar cell (A is the hydrogen production area, B is the oxygen production area), the generated hydrogen bubbles can also obstruct light penetration or affect contact with the electrolyte, resulting in a decrease in hydrogen production efficiency. 2. Inability to select a better ohmic contact metal: Generally, to improve the hydrogen / oxygen conversion efficiency, specific photocatalyst materials, such as platinum (Pt) and rhodium (Rh), are deposited on the surface of the solar cell. However, these materials are not easy to form ohmic contacts in solar cells. Even after thermal annealing, the interface resistance is still relatively high, and they can block the cell and affect light penetration, often resulting in a decrease in the electrical efficiency of the solar cell. 3. Inability to fully utilize light: Conventional technology can hinder the solar cell from receiving light due to the obstruction of the surface photocatalyst film and the bubbles generated by the hydrogen production reaction.
[0004] In view of the various problems of conventional technology, in order to solve them all, it is necessary to develop an invention that can solve the problem of solar cells being corroded and damaged by acid / alkali electrolytes and the shortcomings of the previous technology. [Summary of the Invention]
[0005] The main objective of this invention is to overcome the aforementioned problems encountered in the prior art and provide a packaging method that allows solar cells to be directly immersed in acid / alkali electrolytes. This method makes it less likely for the structure of the solar cell to be etched and damaged by the acid / alkali electrolytes during the hydrogen / oxygen production process, thus greatly improving durability and lifespan. It can also increase photocurrent and improve hydrogen / oxygen production efficiency. With the above advantages, the cost of this optoelectronic component packaging method can be greatly reduced.
[0006] Another objective of the present invention is to provide a packaging structure that, in addition to protecting the solar cell without blocking incident light, transfers electrons and holes through circuitry, thereby increasing the contact area with the electrolyte, maximizing the lifespan and hydrogen / oxygen production efficiency of the solar cell, and further reducing the cost of the optoelectronic component packaging method.
[0007] To achieve the above objectives, the present invention provides a method for packaging optoelectronic components, comprising at least the following steps: Step 1: A solar cell wafer having front and back electrodes is adhered to the front side of a carrier plate using conductive paste. The carrier plate includes an insulating layer. The front side of the insulating layer has a first metal layer and a second metal layer, and the back side has a third metal layer. The first metal layer is electrically connected to the back electrode of the solar cell wafer. The second metal layer and the third metal layer are electrically connected through a through-hole in the insulating layer. The first metal layer and the second metal layer form a first patterned conductive circuit, and the third metal layer forms a second patterned conductive circuit. The circuit; Step 2: Using a wire bonding machine, at least one gold wire is soldered onto the solar cell wafer to electrically connect it to the second metal layer via the at least one gold wire; Step 3: Optical-grade silicone is coated onto the solar cell wafer and its surroundings to form an insulating protective layer, which covers the second metal layer, the solar cell wafer, and part of the first metal layer; and Step 4: A photocatalyst that facilitates the production of hydrogen or oxygen is deposited on the first metal layer on the front side of the carrier plate (where the insulating protective layer is not covered) and on the third metal layer on the back side of the carrier plate, respectively, thereby completing the encapsulation structure of a solar cell, which can be directly immersed in the electrolyte.
[0008] In the above embodiments of the present invention, the solar cell wafer is a III-V group semiconductor material, a metal oxide material, or a nitrogen compound material.
[0009] In the above embodiments of the present invention, the III-V semiconductor material is selected from indium gallium phosphide (InGaP), gallium arsenide (GaAs), indium phosphide (InP), or any combination thereof.
[0010] In the above embodiments of the present invention, the metal oxide material is selected from titanium dioxide (TiO2), tungsten trioxide (WO3), copper dioxide (CuO2), ferric oxide (Fe2O3), bismuth vanadate (BiVO4), or any combination thereof.
[0011] In the above embodiments of the present invention, the nitrogen compound material is selected from boron carbon nitride (BCN), carbon nitride (C3N4), indium nitride (InN), indium gallium nitride (InGaN), gallium nitride (GaN) or any combination thereof.
[0012] In the above embodiments of the present invention, the insulating layer is selected from aluminum oxide (Al2O3), aluminum nitride (AlN), silicon dioxide (SiO2), beryllium oxide (BeO), silicon nitride (Si3N4), boron nitride (BN) or any combination thereof.
[0013] In the above embodiments of the present invention, the photocatalyst is selected from platinum (Pt), rhodium (Rh), nickel (Ni), iridium oxide (IrOx), nickel molybdenum (NiMo), cobalt tetroxide (Co3O4), chromium trioxide (Cr2O3), or any combination thereof.
[0014] In the above embodiments of the present invention, the electrolyte is sulfuric acid (H2SO4), potassium hydroxide (KOH), potassium phosphate buffer, or water.
[0015] In the above embodiments of the present invention, the conductive paste is tin paste, silver paste or copper paste.
Implementation Method
[0016] Please refer to Figures 1 through 9, which are respectively schematic diagrams of the packaging process of the optoelectronic element of the present invention, side view of the present invention attaching the solar cell wafer to the front of the carrier plate, top view of the present invention attaching the solar cell wafer to the front of the carrier plate, side view of the present invention soldering gold wire, top view of the present invention soldering gold wire, side view of the present invention coating optical grade silicone, top view of the present invention coating optical grade silicone, side view of the present invention coating photocatalyst, and top view of the present invention coating photocatalyst. As shown in the figures: The present invention is a method for packaging optoelectronic elements. The resulting packaging structure can not only protect the solar cell without blocking incident light, but also transfer electrons and holes through circuitry, thereby increasing the contact area with the electrolyte, maximizing the lifespan and hydrogen / oxygen production efficiency of the solar cell, and further reducing costs. The implementation method includes at least the following steps: Step s11: A solar cell wafer 1 having front and back electrodes 11 and 12 is adhered to the front side of a carrier plate 2 using conductive paste. The carrier plate 2 includes an insulating layer 21. The front side of the insulating layer 21 has a first metal layer 22 and a second metal layer 23, and the back side has a third metal layer 24. The first metal layer 22 is electrically connected to the back electrode 12 of the solar cell wafer 1, and the second metal layer 23 and the third metal layer 24 are electrically connected through a through hole 25 in the insulating layer 21. The first metal layer 22 and the second metal layer 23 form a first patterned conductive circuit, and the third metal layer 24 forms a second patterned conductive circuit, as shown in Figures 2 and 3. Step s12: At least one gold wire 3 is soldered onto the solar cell wafer 1 using a wire bonding machine, and the solar cell wafer 1 is electrically connected to the second metal layer 23 by the at least one gold wire 3, as shown in Figures 4 and 5. Step s13: Apply optical-grade silicone to the solar cell wafer 1 and its surrounding area to form an insulating protective layer 4, which covers the second metal layer 23, the solar cell wafer 1, and part of the first metal layer 22, as shown in Figures 6 and 7. Step s14: Deposit a photocatalyst 5 (as shown in the dashed box in Figures 8 and 9) on the first metal layer 22 (excluding the insulating protective layer 4) on the front side of the carrier plate 2 and on the third metal layer 24 on the back side of the carrier plate 2, respectively, to facilitate the generation of hydrogen or oxygen (those shown in the dashed box in Figures 8 and 9). This completes the encapsulation structure of a solar cell 100, allowing the solar cell 100 to be directly immersed in the electrolyte. Thus, the above-disclosed process constitutes a novel optoelectronic device encapsulation method.
[0017] In one preferred embodiment of the present invention, the solar cell wafer 1 may be a III-V semiconductor material comprising indium gallium phosphide (InGaP), gallium arsenide (GaAs), indium phosphide (InP), or any combination thereof.
[0018] In one preferred embodiment of the present invention, the solar cell wafer 1 may be a metal oxide material comprising titanium dioxide (TiO2), tungsten trioxide (WO3), copper dioxide (CuO2), ferric oxide (Fe2O3), bismuth vanadate (BiVO4), or any combination thereof.
[0019] In one preferred embodiment of the present invention, the solar cell wafer 1 may be a nitrogen compound material comprising boron carbon nitride (BCN), carbon nitride (C3N4), indium nitride (InN), indium gallium nitride (InGaN), gallium nitride (GaN) or any combination thereof.
[0020] In one preferred embodiment of the present invention, the insulating layer 21 of the carrier plate 2 may be made of an insulating and acid and alkali resistant material such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon dioxide (SiO2), beryllium oxide (BeO), silicon nitride (Si3N4), boron nitride (BN) or any combination thereof.
[0021] In one preferred embodiment of the present invention, the photocatalyst 5 is selected from platinum (Pt), rhodium (Rh), nickel (Ni), iridium oxide (IrOx), nickel molybdenum (NiMo), cobalt tetroxide (Co3O4), chromium trioxide (Cr2O3), or any combination thereof.
[0022] In one preferred embodiment of the present invention, the electrolyte may be an acid / base electrolyte of sulfuric acid (H2SO4), potassium hydroxide (KOH), or even potassium phosphate buffer or water.
[0023] In one preferred embodiment of the present invention, the conductive paste is solder paste, silver paste, or copper paste. Therefore, the present invention has the following advantages: 1. Significantly increased hydrogen / oxygen production area: Compared to the conventional technique shown in Figure 10, which involves coating a ring of insulating adhesive around the solar cell, the present invention transfers the electrons and holes generated by the solar cell after illumination to the metal layers on both the front and back sides of the carrier plate, significantly increasing the hydrogen / oxygen production contact area. Furthermore, since the reaction area is not on the surface of the solar cell, unobstructed light exposure allows the solar cell to maintain a better operating state. Additionally, the metal layers on both the front and back sides can be plated with photocatalytic and corrosion-resistant materials without selection restrictions (if the conventional technique is applied to the surface of the solar cell, shielding and interface impedance must be considered), significantly improving durability and hydrogen / oxygen production reaction, as shown in Figures 8 and 9. 2. Optimal Ohmic Contact Metal Selection: This invention maintains commonly used electrode metals (such as nickel (Ni), germanium (Ge), gold (Au), and palladium (Pd) for n-GaAs) to achieve lower metal-semiconductor interface impedance and maintain optimal electrical properties. 3. Full Utilization of Light: The optical-grade silicone coating on the solar cell of this invention is completely transparent and does not obstruct light incidence. Besides protecting the solar cell from corrosion by acid / alkali electrolytes, it also has a micro-focusing effect and can increase photocurrent by more than 5%, effectively improving solar cell efficiency and increasing hydrogen / oxygen production.
[0024] In summary, the present invention is a method for packaging optoelectronic components, which can effectively improve the various shortcomings of conventional methods. The packaging method of directly immersing solar cells in acid / alkali electrolytes makes the structure of the solar cells less susceptible to etching and damage by acid / alkali electrolytes during the hydrogen / oxygen production process, greatly improving durability and lifespan. It can also increase photocurrent and improve hydrogen / oxygen production efficiency. The above advantages can significantly reduce costs, thereby making the present invention more advanced, more practical, and more in line with the needs of users. It has met the requirements for an invention patent application, and therefore a patent application is filed in accordance with the law.
[0025] However, the above description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any simple equivalent changes and modifications made in accordance with the scope of the patent application and the contents of the specification of the present invention should still fall within the scope of the patent of the present invention. [Simplified Explanation of the Diagram]
[0026] Figure 1 is a schematic diagram of the packaging process of the optoelectronic element of the present invention. Figure 2 is a side view of the present invention showing the solar cell wafer being attached to the front of the carrier plate. Figure 3 is a top view of the present invention showing the solar cell wafer being attached to the front of the carrier plate. Figure 4 is a side view of the present invention showing the application of gold wires. Figure 5 is a top view of the present invention showing the application of gold wires. Figure 6 is a side view of the present invention showing the coating of optical-grade silicone. Figure 7 is a top view of the present invention showing the coating of optical-grade silicone. Figure 8 is a side view of the present invention showing the deposition of photocatalyst. Figure 9 is a top view of the present invention showing the deposition of photocatalyst. Figure 10 is a schematic diagram of the packaging structure of a conventional solar cell.
Claims
1. A method for packaging an optoelectronic component, comprising at least the following steps: Step 1: Attaching a solar cell wafer having front and back electrodes to the front side of a carrier plate using conductive paste, the carrier plate comprising an insulating layer, the front side of the insulating layer having a first metal layer and a second metal layer, and the back side having a third metal layer, the first metal layer being electrically connected to the back electrode of the solar cell wafer, the second metal layer and the third metal layer being electrically connected through a through-hole in the insulating layer, wherein the first metal layer and the second metal layer form a first patterned conductive circuit, and the third metal layer is a second patterned conductive circuit; Step 2: Soldering at least one gold wire using a wire bonding machine to electrically connect the solar cell wafer to the second metal layer via the at least one gold wire; Step 3: Apply optical-grade silicone to the solar cell wafer and its surrounding area to form an insulating protective layer, which covers the second metal layer, the solar cell wafer, and part of the first metal layer; and Step 4: Deposit a photocatalyst that facilitates the production of hydrogen or oxygen on the first metal layer on the front side of the carrier plate (where the insulating protective layer is not covered) and on the third metal layer on the back side of the carrier plate, respectively, thereby completing the encapsulation structure of a solar cell, which can be directly immersed in the electrolyte.
2. The optoelectronic element packaging method according to claim 1, wherein, The solar cell wafer is made of III-V group semiconductor materials, metal oxide materials, or nitrogen compound materials.
3. The optoelectronic element packaging method according to claim 2, wherein, The III-V semiconductor material is selected from indium gallium phosphide (InGaP), gallium arsenide (GaAs), indium phosphide (InP), or any combination thereof.
4. The optoelectronic element packaging method according to claim 2, wherein, The metal oxide material is selected from titanium dioxide (TiO2), tungsten trioxide (WO3), copper dioxide (CuO2), ferric oxide (Fe2O3), bismuth vanadate (BiVO4), or any combination thereof.
5. The optoelectronic element packaging method according to claim 2, wherein, The nitrogen compound material is selected from boron carbon nitride (BCN), carbon nitride (C3N4), indium nitride (InN), indium gallium nitride (InGaN), gallium nitride (GaN), or any combination thereof.
6. The optoelectronic element packaging method according to claim 1, wherein, The insulating layer system is selected from aluminum oxide (Al2O3), aluminum nitride (AlN), silicon dioxide (SiO2), beryllium oxide (BeO), silicon nitride (Si3N4), boron nitride (BN), or any combination thereof.
7. The optoelectronic element packaging method according to claim 1, wherein, The photocatalyst is selected from platinum (Pt), rhodium (Rh), nickel (Ni), iridium oxide (IrOx), nickel-molybdenum (NiMo), cobalt tetroxide (Co3O4), chromium trioxide (Cr2O3), or any combination thereof.
8. The optoelectronic element packaging method according to claim 1, wherein, The electrolyte is sulfuric acid (H2SO4), potassium hydroxide (KOH), potassium phosphate buffer, or water.
9. The optoelectronic element packaging method according to claim 1, wherein, The conductive paste is solder paste, silver paste, or copper paste.
