Manufacturing method of array sensor element and array sensor element

TW202641115APending Publication Date: 2026-10-01SEIKO EPSON CORP
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Patent Information

Application Number
TW115111097
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-27
Filing Date
2026-03-24
Publication Date
2026-10-01

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Abstract

The objective of this invention is to suppress the formation of bumps in the electrode layer during manufacturing. The manufacturing method of the array sensor element of this invention includes the following steps: (a) forming a release film on a first substrate; (b) forming a passivation film on the release film; (c) forming piezoelectric elements, which are stacked in an array on the passivation film, comprising a first electrode layer, a piezoelectric layer, and a second electrode layer; (d) placing a second substrate on the piezoelectric elements and bonding the element layer containing the piezoelectric elements to the second substrate; and (e) irradiating a laser beam onto the side of the first substrate opposite to the surface of the release film to peel the piezoelectric elements from the first substrate; in (c), if the first electrode layer is a single layer, a high-melting-point metal is formed as the first electrode layer; if the first electrode layer has multiple layers, a high-melting-point metal layer is formed as the bottommost layer of the first electrode layer.
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