Manufacturing method of semiconductor light-emitting element and semiconductor light-emitting element

Abstract

This invention provides a semiconductor light-emitting element and a method for manufacturing the semiconductor light-emitting element to suppress leakage current in the reverse bias direction. The method for manufacturing a semiconductor light-emitting element includes: a bonding step, bonding a support substrate to an intermediate electrode layer having a dielectric portion and a semiconductor multilayer via a metal bonding layer; a mesa forming step, etching the semiconductor multilayer to form a cleavage region on the surface of the intermediate electrode layer exposing the dielectric portion; and a cutting step, cutting the support including the support substrate, the metal bonding layer, and the intermediate electrode layer by laser irradiation in the cleavage region, wherein, in plan view, the average distance L between the outer edge of the upper surface of the mesa shape after the cutting step and the outer edge of the upper surface of the support is 14 μm or more and 20 μm or less.

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