Semiconductor device

Abstract

A semiconductor device includes a base, a semiconductor stack, a contact structure, an insulating structure, a reflective metal structure, and an adhesive layer. The semiconductor stack is disposed on the base and includes first and second conductive type semiconductor structures and an active structure disposed therebetween. The contact structure is disposed between the second conductive type semiconductor structure and the base. The insulating structure is disposed between the contact structure and the base and includes a first opening. The reflective metal structure is disposed between the insulating structure and the base, and is electrically connected to the contact structure through the first opening. The adhesive layer is disposed between the insulating structure and the reflective metal structure. The adhesive layer includes a metal oxide, and an oxygen content of the metal oxide close to the insulating structure is greater than an oxygen content of the metal oxide close to the reflective metal structure.

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