Method of forming thin film of perovskite compound and method of manufacturing solar cell using the same

TW202641147APending Publication Date: 2026-10-01JUSUNG ENG
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Patent Information

Application Number
TW115107785
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-05
Filing Date
2026-03-04
Publication Date
2026-10-01

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Abstract

Disclosed is a method of forming a thin film of a perovskite compound, wherein the thin film is composed of ABX3 and is formed on a substrate, comprising (a) a step of forming a BX2 compound by supplying B precursor and X precursor onto the substrate in a chamber; and (b) a step of supplying A precursor onto the substrate in the chamber, wherein the (a) step and the (b) step are performed repeatedly, the A precursor is formed of at least one compound selected from an amine-based compound and an amidine-based compound, the B precursor is formed of an organic metal compound containing divalent cation, and the X precursor is formed of hydrogen halide.
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