Semiconductor device
TW202641165APending Publication Date: 2026-10-01SK HYNIX INC
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Patent Information
- Application Number
- TW115100602
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-27
- Filing Date
- 2026-01-07
- Publication Date
- 2026-10-01
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Figure TWG2TA001078959_001 
Figure TWG2TA001078959_002 
Figure TWG2TA001078959_003
Abstract
A semiconductor device according to embodiments of the present disclosure includes a first electrode and a second electrode, a ferroelectric layer disposed between the first electrode and the second electrode, a first polarization control layer disposed between the first electrode and the ferroelectric layer, and a second polarization control layer disposed between the second electrode and the ferroelectric layer. An oxygen area density of the ferroelectric layer is between an oxygen area density of the first polarization control layer and an oxygen area density of the second polarization control layer.
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