Magnetic memory device and method for manufacturing magnetic memory device

Abstract

This invention provides a magnetic memory device and a method for manufacturing the magnetic memory device, which ensures the flatness of an electrode disposed between a switching element and a magnetoresistive element. One embodiment of the magnetic memory device includes: a selector body; an MTJ body disposed above the selector body; and an electrode disposed between the selector body and the MTJ body. The electrode includes a first sub-electrode having: a first conductor; and a second conductor located closer to the MTJ body than the first conductor and in contact with the first conductor. The first conductor has a crystalline structure. The second conductor has an amorphous structure.

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