Low mass ion etch for cavity shaping engineering for CMOS devices
TW202641178APending Publication Date: 2026-10-01APPLIED MATERIALS INC
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114139471
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-19
- Filing Date
- 2025-10-14
- Publication Date
- 2026-10-01
Smart Images
Figure TWG2TA001078350_001 
Figure TWG2TA001078350_002 
Figure TWG2TA001078350_003
Abstract
A method of forming an electrical contact in a semiconductor structure includes performing a cavity shaping process to form a cavity in an exposed surface of an epitaxially grown region within a contact trench in a dielectric layer formed over a semiconductor region, the cavity shaping process including a reactive ion etching (RIE) process using a process gas consisting of an etch gas and a supporting inert gas including species less than
Need to check novelty before this filing date? Find Prior Art