Methods for low temperature epitaxial deposition of phosporus-doped silicon

TW202641179APending Publication Date: 2026-10-01APPLIED MATERIALS INC
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Patent Information

Application Number
TW114141373
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-28
Filing Date
2025-10-27
Publication Date
2026-10-01

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Abstract

An embodiment of a method of depositing a phosphorus-doped silicon film onto a substrate within a processing chamber includes heating a substrate positioned in a processing region of a processing chamber to a temperature less than
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