Methods for seam-free gap fill

Abstract

Embodiments of the present disclosure generally relate to methods for seam-free filling of features. In one or more embodiments, a method of filling gaps includes exposing a plurality of features on a substrate to a deposition-etch process to fill openings within the plurality of features with a material, such as titanium nitride. Each cycle of the deposition-etch process includes depositing the material onto surfaces of the plurality of features during a vapor deposition process, wherein the material is conformally lined on the surfaces of the plurality of features during the vapor deposition process and ceasing the vapor deposition process, exposing the material to an etchant containing a metal chloride during an etch process, wherein the material is non-conformally removed from the surfaces of the plurality of features during the etch process and ceasing the etch process, and sequentially repeating the cycle of the deposition-etch process.

Images