Methods for improving etch profiles of semiconductor devices

TW202641188APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115102113
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-01-29
Filing Date
2026-01-20
Publication Date
2026-10-01

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Abstract

A method for fabricating semiconductor devices is disclosed. The method includes forming a first hardmask layer over a substrate. The method includes forming a second hardmask layer over the first hardmask layer. The method includes forming an opening extending through the second hardmask layer and the first hardmask layer. The method includes depositing a polymer layer, wherein the polymer layer includes at least a portion in the opening. The method includes etching the substrate using respective remaining portions of the first hardmask layer and the second hardmask layer, together with the polymer layer, as a mask.
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