Method of manufacturing semiconductor device and semiconductor device

Abstract

A method of manufacturing a semiconductor device includes forming a trench at an upper surface of a first semiconductor layer, introducing a first impurity of a first conductivity type into the first semiconductor layer in an element formation region, forming a first impurity region by diffusing the first impurity by heat treatment, forming a second semiconductor layer on the first semiconductor layer by epitaxial growth, introducing a second impurity of the first conductivity type into the second semiconductor layer, forming a second impurity region so as to be connected to the first impurity region by diffusing the second impurity by heat treatment, and forming a semiconductor element on the second semiconductor layer.

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