Substrate processing apparatus

Abstract

This substrate processing apparatus includes a processing chamber; a base disposed within the processing chamber to which high-frequency power is applied; an electrostatic chuck for placing a substrate; a first ring member formed in an annular shape so as to cover a peripheral portion of the substrate placed on the electrostatic chuck from above, and disposed above the substrate with a separation therefrom; a second ring member disposed so as to overlap the first ring member in a plan view, disposed below the substrate, and formed in an annular shape so as to surround the electrostatic chuck; and a third ring member formed in an annular shape so as to surround the electrostatic chuck and disposed below the first ring member. The second ring member is formed of a material having a dielectric constant lower than that of the third ring member.

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