Plasma treatment apparatus, power supply system, control methods and procedures

TW202641201APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115124971
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2019-06-05
Filing Date
2019-06-13
Publication Date
2026-10-01

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Abstract

The object of this invention is to control the quantity and quality of free radicals and ions. To achieve the above object, this invention provides a control method for a plasma processing apparatus having a first electrode on which a subject is placed, characterized by comprising: a step of supplying bias power to the first electrode; and a step of supplying a source power having a frequency higher than the bias power to a plasma processing space; the source power having a first state and a second state; the control method further comprising: a first control step of interactively applying the first state and the second state in a manner synchronized with the phase of a reference electrical state representing any one of the voltage, current, or electromagnetic field measured by the power supply system of the bias power within one cycle.
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