Ultraviolet-assisted etching of silicon-and-germanium-containing materials
TW202641202APending Publication Date: 2026-10-01APPLIED MATERIALS INC
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Patent Information
- Application Number
- TW115101037
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-01-13
- Filing Date
- 2026-01-12
- Publication Date
- 2026-10-01
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Abstract
Exemplary semiconductor processing methods may include providing an etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A layer of material may be disposed on the substrate. The methods may include directing an ultraviolet (UV) light source into the processing region. The methods may include contacting the layer of material with the etchant precursor. The contacting may etch the layer of material.
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