Etching method and plasma treatment device

TW202641205APending Publication Date: 2026-10-01TOKYO ELECTRON LTD
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Patent Information

Application Number
TW115104371
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-02-12
Filing Date
2026-02-04
Publication Date
2026-10-01

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Abstract

This invention provides a technique for suppressing shape abnormalities caused by etching. The etching method provided by this invention includes the following steps: (a) preparing a substrate having a carbon-containing film and a first mask on the carbon-containing film, the first mask comprising phosphorus and having a first sidewall defining a first opening that exposes the carbon-containing film; and (b) forming a recess in the carbon-containing film through the first opening using plasma generated from a first processing gas including oxygen gas.
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