Substrate processing method and substrate processing apparatus

Abstract

In one exemplary embodiment, the substrate processing method includes the following steps: (a) placing a silicon substrate on a substrate support portion within a cavity, the silicon substrate having a substrate body and a mask on the substrate body, the mask providing an opening through which at least a portion of the inclined surface of the silicon substrate is exposed; (b) forming a protective film on the silicon substrate, the protective film having a first thickness on the substrate body at the bottom of the opening and a second thickness greater than the first thickness on the inclined surface; and (c) cutting the silicon substrate through the opening using plasma generated by a processing gas containing a halogen-containing gas.

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