Rapid thermal cycling annealing apparatus

Abstract

Apparatuses for rapid-cycle high-temperature heating and cooling are disclosed. The apparatuses can be used for elementary, binary, tertiary, and quaternary alloys of wide and ultra-wide band gap compound semiconductors. The apparatuses can be used for wafer annealing, and can include an induction coil, and at least one gas nozzle. A susceptor holds a workpiece with a first face of the workpiece exposed and a second face of the workpiece in thermal contact with a first surface of the susceptor. The first gas nozzle is arranged to disperse cooling gas to the susceptor and workpiece assembly. Each heating operation uses inductive coupling to the susceptor to heat the workpiece from

Images