Heater rod and heater terminals for semiconductor manufacturing equipment

Abstract

This invention relates to a heater rod and heater terminal for a semiconductor manufacturing apparatus. The heater rod of this invention is a rod that supplies power by contacting a conductor or terminal, and includes an upper part and a main body. The outer diameter of the upper part may be equal to or smaller than the outer diameter of the main body.

Description

[Technical Field]

[0001] This invention relates to a heater rod and heater terminal for a semiconductor manufacturing apparatus. [Previous Technology]

[0002] Typically, semiconductor devices or display devices are fabricated by patterning multiple thin film layers, including dielectric and metal layers, sequentially stacked on a glass substrate, flexible substrate, or semiconductor wafer substrate. These thin film layers are sequentially deposited on the substrate by chemical vapor deposition (CVD) or physical vapor deposition (PVD) processes.

[0003] In these CVD and PVD apparatuses, heaters are provided to support glass substrates, flexible substrates, semiconductor wafer substrates, etc., and to apply predetermined heat. In etching processes and photoresist firing processes for thin film layers formed on the support substrate, the heaters are also used to heat the substrate.

[0004] Figure 1 is a structural diagram of a heater for a semiconductor manufacturing apparatus according to the prior art.

[0005] As shown in FIG1, the heater 100 for semiconductor manufacturing apparatus can be used to support substrates such as wafers in semiconductor manufacturing processes and heat the substrates to the process temperatures required for processes such as CVD or PVD.

[0006] The existing heater 100 has a circular plate structure, consisting of a ceramic body 110 and a support unit 120 installed at the lower part of the ceramic body 110. The ceramic body 110 is a circular plate-shaped component made of ceramic materials such as aluminum nitride (AlN) or aluminum oxide (Al2O3). Here, the ceramic body 110 includes: a high-frequency electrode 111, which releases the current flowing into the heater 100 during plasma generation to the ground; a heating element 113, which generates heat energy for heating the substrate; a first terminal 112, which electrically connects the high-frequency electrode 111 to a grounding rod 121; and a second terminal 114, which electrically connects the heating element 113 to the heating element rod 123. The ceramic support 120 includes a grounding rod 121 for grounding the high-frequency electrode 111 and a heating element rod 123 for connecting the heating element 113 to an external power source (not shown).

[0007] In the existing first terminal 112 and second terminal 114, when the heater expands due to heat or contracts due to cooling, the terminal contact portion will be separated, resulting in an electrical short circuit, causing deformation or poor contact problems. Specifically, the heating element rod 123 is made of nickel (Ni) with a coefficient of thermal expansion of 13.3×10-6 K-1, and the ceramic body 110 is made of ceramic materials such as aluminum nitride (AlN) with a coefficient of thermal expansion of 4.4×10-6 K-1 or aluminum oxide (Al2O3) with a coefficient of thermal expansion of 8.0×10-6 K-1. Because the coefficients of thermal expansion between the rods 121, 123 and the ceramic body 110 are significantly different, when high temperature and repeated heat load are applied, stress concentration may cause damage to the joint between the terminals 112, 114 and the rods 121, 123, or damage to the ceramic body 110.

[0008] To compensate for these problems, a third component, such as a Kovar bonding alloy, is installed between the terminals 112, 114 and the rods 121, 123. The coefficient of thermal expansion of this third component is between that of the rods 121, 123 and the ceramic body 110. However, this method requires additional fabrication processes to add extra materials, or it may generate additional resistance that hinders current flow. Furthermore, because the bonding area between the terminals 112, 114 and the rods 121, 123 is narrow, the bonding strength is low, making the rods 121, 123 prone to detachment. These problems directly lead to a decrease in semiconductor manufacturing efficiency and urgently need to be addressed.

[0009] The background technology described herein is something that the inventors have mastered or learned in the process of developing this invention, and should not be construed as necessarily being a general known technology disclosed before the application for this invention. [Summary of the Invention]

[0010] [Technical problem to be solved]

[0011] In order to solve the above problems, the present invention provides a heater rod and heater terminal for a semiconductor manufacturing apparatus, which can prevent deformation caused by thermal expansion or cooling contraction and maintain contact.

[0012] However, the technical problem to be solved by the present invention is not limited to the subject matter mentioned above, and other subject matters not mentioned will be clearly understood by those skilled in the art from the following description.

[0013] [Technical means to solve the problem]

[0014] The heater rod of the semiconductor manufacturing apparatus according to the present invention is a rod that supplies power as a contact conductor or terminal. The rod includes an upper part and a main body, wherein the outer diameter of the upper part is equal to or smaller than the outer diameter of the main body.

[0015] According to one embodiment, the upper part includes an internal space, and the upper part includes a processing groove that penetrates the outer side of the upper part and the inner side of the internal space.

[0016] According to one embodiment, when viewed from the cross-section of the upper part, the processing groove is asymmetrical with respect to the centerline of the rod-shaped member.

[0017] According to one embodiment, the interval between the upper and lower surfaces of the processing groove is less than the length of the upper part.

[0018] According to one embodiment, the processing groove is processed into a spring shape based on the helical support.

[0019] According to one embodiment, the cross-section of the spiral support is a square, rectangle, polygon, trapezoid, or a polygon with at least one rounded corner (R part).

[0020] A heater terminal for a semiconductor manufacturing apparatus according to the present invention includes: a plate-shaped member including a hot wire; a rod-shaped member supplying power to the hot wire; and a terminal connecting the rod-shaped member to the hot wire, the rod-shaped member including an upper portion and a main body portion.

[0021] According to one embodiment, the upper portion is located between the contact surface that contacts the terminal and the underside of the plate-like member.

[0022] According to one embodiment, the upper part is elastic when it expands due to heat.

[0023] According to one embodiment, the upper part is an end of the main body that has been processed into a spring shape.

[0024] According to one embodiment, the terminal is spherical or elliptical, and the terminal includes a groove for inserting the rod-shaped member.

[0025] According to one embodiment, it further includes a conductor formed on the upper part of the rod-shaped member.

[0026] According to one embodiment, the conductor forms a contact layer on the contact surface between the rod and the terminal.

[0027] According to one embodiment, the conductor is fixed inside the upper part of the rod-shaped member, spanning the upper part of the rod-shaped member, and the conductor is in contact with the terminal.

[0028] According to one embodiment, the conductor and the rod are integrally formed, and the conductor material is the same as the rod material.

[0029] According to one embodiment, the conductor is separated from the rod-shaped member, and the conductor material may be the same as or different from the rod-shaped member material.

[0030] According to one embodiment, the plate-shaped member includes a high-frequency electrode, and the terminal includes a groove corresponding to the high-frequency electrode.

[0031] [Effects of the Invention]

[0032] The present invention can provide a heater rod and heater terminal for a semiconductor manufacturing apparatus.

[0033] Specifically, the heater rod-shaped member for a semiconductor manufacturing apparatus of the present invention has an upper portion that prevents deformation and maintains contact when it expands due to heat or contracts due to cooling, thereby providing a heater terminal for a semiconductor manufacturing apparatus. By providing a processed upper portion of the rod-shaped member, it is not necessary to add additional material to alleviate thermal expansion, and thermal deformation can be prevented by elasticity.

Implementation Method

[0034] The embodiments will now be described in detail with reference to the accompanying drawings. It should be understood that various modifications can be made to the embodiments, and the scope of the present invention is not limited to the following embodiments. All modifications to the embodiments, their equivalents, and even their substitutes are within the scope of the present invention.

[0035] The terminology used in the embodiments is only for illustrating specific embodiments and is not intended to limit the scope. Unless otherwise specified in the content, singular expressions include plural meanings. In this specification, terms such as "comprising" or "having" are used to express the presence of the features, numbers, steps, operations, constituent elements, accessories or combinations thereof described in the specification, and do not exclude the possibility of the presence or additional addition of one or more other features, numbers, steps, operations, constituent elements, accessories or combinations thereof.

[0036] Unless otherwise defined, all terms used herein, including technical or scientific terms, shall have their ordinary meaning as understood by one of ordinary skill in the art. Terms commonly used, such as those defined in dictionaries, shall be understood as having the meaning in the relevant technical content, and shall not be interpreted as having an idealized or overly formal meaning unless explicitly defined in this specification.

[0037] Furthermore, in the description with reference to the accompanying drawings, the same reference numerals are used for the same constituent elements regardless of the drawing numbers, and repeated descriptions are omitted. In the description of embodiments, detailed descriptions of related prior art are omitted when it is determined that such detailed descriptions would unnecessarily obscure the embodiments. Furthermore, when describing the constituent elements of an embodiment, terms such as first, second, A, B, (a), and (b) may be used. These terms are only used to distinguish one constituent element from other constituent elements and are not used to limit the nature or order of the corresponding constituent elements. When it is stated that a component is "connected," "linked," or "attached" to another component, it should be understood that a component can be directly connected or attached to another component, and intermediate components can also be "connected," "linked," or "attached" to that component.

[0038] When a constituent element has a common function with a constituent element of a certain embodiment, the same name is used in other embodiments for description. Unless counterexamples are mentioned, the description of a certain embodiment can be applied to other embodiments, and specific descriptions of repeated content can be omitted.

[0039] The heater rod and heater terminals for the semiconductor manufacturing apparatus of the present invention will be specifically described below with reference to the embodiments and accompanying drawings. However, the present invention is not limited to these embodiments and drawings.

[0040] The heater rod of the semiconductor manufacturing apparatus of the present invention is a rod that supplies power by contacting a conductor or terminal, and includes an upper part and a main body part, wherein the outer diameter of the upper part may be equal to or smaller than the outer diameter of the main body part.

[0041] FIG2 is a schematic cross-sectional view of the heater rod-shaped member for a semiconductor manufacturing apparatus of the present invention. Referring to FIG2, the heater rod-shaped member 200 for a semiconductor manufacturing apparatus of the present invention includes an upper portion 210 and a main body portion 220, wherein the upper portion 210 may be a processed portion of the main body portion 220. The outer diameter of the upper portion 210 may be equal to or smaller than the outer diameter of the main body portion 220. This may be because the inner or outer part of the upper portion 210 is processed to be equal to or smaller than the outer diameter of the main body portion 220.

[0042] The rod-shaped member 200 of the heater for the semiconductor manufacturing apparatus is powered by contacting the upper part 210 of the rod-shaped member with a conductor or terminal, and may include at least one selected from the group consisting of tungsten, nickel, copper, aluminum, iron, gold, silver, molybdenum and titanium, preferably nickel.

[0043] According to one embodiment, the upper part 210 may include an internal space and a processing groove 211 extending through the outer side of the upper part 210 and the inner side of the internal space.

[0044] Preferably, the upper part 210 is a hollow cylindrical shape with an internal space. The internal space may not be separated from the outside and may include a processing groove 211 penetrating both the outer and inner sides of the upper part 210. This penetration can be a double-sided penetration from the outer side to the inner side and then outwards, or a single-sided penetration from the inner side to the outer side. The processing groove 211 opens the internal space of the upper part 210 to the outside.

[0045] According to one embodiment, when viewed from the cross-section of the upper part 210, the processing groove 211 is asymmetrical based on the centerline of the heater rod 200 for semiconductor manufacturing apparatus.

[0046] Referring to Figure 2, the processing groove 211 is asymmetrical about the center line (dashed line) of the heater rod 200 for semiconductor manufacturing apparatus. The processing groove 211 is elastic due to its asymmetry with respect to the center line (dashed line). This elasticity can compensate for deformation during thermal expansion or cooling contraction and maintain contact, thereby ensuring product stability and lifespan.

[0047] According to one embodiment, the interval between the upper and lower surfaces of the processing groove 211 may be less than the length of the upper part 210.

[0048] The interval between the upper and lower surfaces of the processing groove 211 can represent the height of the processing groove 211, which can be less than the length of the upper part 210, and the upper part 210 can have at least one processing groove 211 formed thereon.

[0049] Preferably, the interval can be 5% to 35% of the upper length, and when within the range of the interval, it can provide the necessary elasticity for thermal expansion.

[0050] According to one embodiment, the processing groove 211 can be processed into a spring shape based on the spiral support 212.

[0051] Referring to Figure 2, the processing groove 211 is formed asymmetrically and continuously with respect to the center line (dashed line), thereby the upper part 210 is formed into a spring shape including a spiral support part 212.

[0052] The upper part 210 is machined into a spring shape, including a machining groove 211 and a spiral support part 212 that supports the machining groove 211 and serves as an elastic body, which gives it excellent elasticity when heated. In particular, the thermal conductivity of the heater rod 200 for semiconductor manufacturing apparatus releases heat from the heater. By forming the heater rod 200 for semiconductor manufacturing apparatus into a spring-shaped elastic structure, the thermal conductivity area is reduced and the thermal conductivity efficiency is decreased, which helps to prevent heat loss from the heater. In addition, when the heater rod 200 for semiconductor manufacturing apparatus is joined to the terminal, a certain force needs to be applied. When a spring-shaped elastic structure is used, it is beneficial to evenly distribute the force on the filler joint surface to achieve uniform jointing.

[0053] Simply forming serrated grooves on one or both sides of the heater rod 200 for semiconductor manufacturing apparatus to provide elasticity achieves elasticity while deforming through thermal expansion and absorbing heat through this deformation. However, this structure is more rigid than a spring-like elastic structure and has low recovery ability after thermal expansion. It will deform due to repeated contraction and recovery during the thermal expansion process, reducing the recovery ability and increasing the possibility of short circuit between the terminal and the upper junction. The spiral support 212 processed into a spring shape in this invention can prevent the above problems. Thus, deformation can be compensated during thermal expansion or cooling contraction while maintaining contact, thereby ensuring the stability and life of the product by compensating for deformation and maintaining contact.

[0054] According to one embodiment, the cross-section of the spiral support 212 may be a square, rectangle, polygon, trapezoid, or a polygon with rounded corners (R-section) in one or more places.

[0055] The cross-section of the spiral support portion 212 of the upper part 210, i.e. the cross-section of the spring rotation portion, can be a variety of polygons other than a sphere, and can include a portion of rounded corners (R portion).

[0056] The heater terminal for a semiconductor manufacturing apparatus of the present invention includes: a plate-shaped member including a hot wire; a rod-shaped member for supplying power to the hot wire; and a terminal for connecting the rod-shaped member to the hot wire, wherein the rod-shaped member may include an upper part and a main body part.

[0057] FIG3 is a schematic cross-sectional view of a heater terminal for a semiconductor manufacturing apparatus according to the present invention. Referring to FIG3, the heater terminal 300 for a semiconductor manufacturing apparatus of the present invention can represent a part of a heater for a semiconductor manufacturing apparatus, showing a terminal joint including: a plate-shaped member 320 including a hot wire 310; a rod-shaped member 330 for power supply; and a terminal 340 for connecting the hot wire 310 and the rod-shaped member 330.

[0058] The plate-shaped member 320 may include at least one selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al2O3), silicon carbide (SiC), graphite and quartz, preferably aluminum nitride (AlN).

[0059] The hot wire 310 generates heat energy to heat the substrate, preferably containing molybdenum (Mo).

[0060] The rod-shaped member 330 may include an upper part 331 and a main body part 332, wherein the upper part 331 may be the part of the main body part 332 that has been processed.

[0061] According to one embodiment, the upper portion 331 may be located between the contact surface with the contact terminal 340 and the underside of the plate-shaped member 320.

[0062] The upper part 331 may be a part of the main body 332 after processing, and may be located between the contact surface of the rod-shaped member 330 and the terminal 340 and the bottom of the plate-shaped member 320, that is, between the outside of the plate-shaped member 320 in the insertion direction of the rod-shaped member 330.

[0063] Since the upper part 331 will affect the electrical conductivity and the product use environment when it protrudes outward from the plate-shaped member 320, it is preferable to be located inside the plate-shaped member 320.

[0064] According to one embodiment, the upper part 331 may be elastic when it expands due to heat.

[0065] The upper part 331 may be a processed part of the main body 332, and can be elastic when heated and expanded. The processing here refers to forming a processing groove 333. Because of its elasticity, it can compensate for deformation when heated and expanded or cooled and contracted, while maintaining contact. Thus, by compensating for deformation and maintaining contact, the stability and life of the product are guaranteed.

[0066] According to one embodiment, the upper part 331 may be one end of the main body part 332 that has been processed into a spring shape.

[0067] Because the upper part 331 is machined into a spring shape, and includes a machining groove 333 and a spiral support part 334 that supports the machining groove 333 while also serving as an elastic body, it has excellent elasticity, which is beneficial for preventing heat dissipation from the heater. Furthermore, when the rod-shaped member 330 is joined to the terminal 340, it facilitates the formation of a uniform joint. In particular, by machining it into a spring shape to improve the recovery ability after thermal expansion, the possibility of a short circuit between the terminal 340 and the upper joint can be reduced. Therefore, deformation can be compensated for during thermal expansion or cooling contraction while maintaining contact, thereby ensuring the stability and lifespan of the product by compensating for deformation and maintaining contact. As described above, it can be elastic during thermal expansion, and there is no need to add materials such as sealing alloys (Kovar) as in existing methods of reducing heat dissipation, thus solving problems such as resistance caused by adding materials.

[0068] The spring-like shape includes a hollow internal space and an outer continuous spiral twisted shape with grooves. Preferably, the number of spiral turns is 1 to 5. The above number of turns can provide the elasticity required for thermal expansion.

[0069] According to one embodiment, the terminal 340 may be spherical or elliptical and may include a groove for inserting the rod 330.

[0070] At least a portion of the cross-section of the terminal 340 includes a curve, and may be spherical or elliptical. Preferably, a portion of the terminal 340 may be processed to form a surface for connection with the hot wire 310 and the rod-like member 330, and may be a near-spherical or elliptical shape. By employing a spherical or elliptical shape, stress can be relieved to prevent cracking, contact failures caused by narrow contact area that are prone to occur when using existing sharp and angular terminals, and problems with terminal tip damage can be prevented, thus preventing poor contact and ensuring stability.

[0071] The terminal 340 is used to connect to the rod-shaped member 330 that supplies power to the hot wire 310. It contacts the rod-shaped member 330 and may include a groove for insertion of the rod-shaped member 330. The terminal 340 includes a groove in the portion that contacts the rod-shaped member 330, and the rod-shaped member 330 is arranged in the groove. That is, the lower part 341 of the groove contacts the upper part of the rod-shaped member 330, and the lower side 342 of the groove contacts the side of the rod-shaped member 330, allowing the terminal 340 to surround the rod-shaped member. Thus, the contact area between the terminal 340 and the rod-shaped member 330 is expanded to the side of the rod-shaped member 330, improving the contact strength between the terminal 340 and the rod-shaped member 330 and preventing poor contact.

[0072] According to one embodiment, a conductor 350 may also be included in the upper portion 331 of the rod-shaped member 330.

[0073] The conductor 350 is located between the rod-shaped member 330 and the terminal 340, and can buffer the deformation of the rod-shaped member 330 due to thermal expansion.

[0074] Conductor 350 may include at least one selected from the group consisting of molybdenum, tungsten, nickel and palladium.

[0075] According to one embodiment, the conductor 350 may form a contact layer at the contact surface between the rod-shaped member 330 and the terminal 340.

[0076] The conductor 350 contacts the rod-shaped member 330 and the terminal 340. The conductor 350 may be formed inside the terminal 340, and may be formed on one side of the rod-shaped member 330 and one side of the terminal 340. Specifically, a contact layer may be formed to connect the upper surface of the rod-shaped member 330 and the lower surface 341 of the groove, and a contact layer may be formed to connect the side surface of the rod-shaped member 330 and the side surface 342 of the groove.

[0077] Referring to Figure 3, the conductor 350 is formed not only on the contact surface, but also inside the upper part 331. However, the implementation is not limited to this, and it can also be formed as a cover covering the upper part 331 of the rod-shaped member 330.

[0078] According to one embodiment, the conductor 350 may be fixed within the upper part 331 of the rod 330 and contact the terminal 340.

[0079] The conductor 350 can be formed inside the contact terminal 340, and can be formed on one side of the rod-shaped member 330 and one side of the terminal 340. Specifically, the conductor 350 can be formed in a "T" shape to contact the upper surface of the rod-shaped member 330 and the lower surface 341 of the groove, and fill the internal space of the upper part 331 of the rod-shaped member 330 while contacting the inner side surface of the upper part 331.

[0080] According to one embodiment, the conductor 350 may be integrally formed with the rod 330 and may be made of the same material as the rod 330.

[0081] The conductor 350 can be integrally formed with the rod 330 so that it will not separate from the rod 330 and is made of the same material.

[0082] In existing systems, if there is no conductor when the rod-shaped member is combined with the terminal, the rod-shaped member will bend due to thermal expansion and contraction, and a short circuit will occur between the terminal and the rod-shaped member. To solve this problem of thermal expansion and contraction, conductors (molybdenum, sealing alloy, tungsten) are used as buffer materials. However, the present invention uses an elastic structure to provide a buffering effect, which can integrate the conductor 350 and the rod-shaped member 330, and achieve the combination without adding a conductor between the rod-shaped member 330 and the terminal 340 to mitigate thermal expansion.

[0083] The conductor 350 and the rod 330 may be selected from at least one of the group consisting of nickel, molybdenum and tungsten.

[0084] According to one embodiment, the conductor 350 is separate from the rod 330 and may be made of the same or different material as the rod 330.

[0085] The conductor 350 may be formed in a separate form from the rod 330, and its material may be determined to be the same as or different from that of the rod 330.

[0086] When the conductor 350 and the rod 330 are separate, the processing convenience can be improved, and the requirements such as changing the conductor material can be flexibly met.

[0087] In the past, due to thermal expansion, Kovar was used as the main conductor. However, the present invention can absorb vertical thermal expansion through an elastic structure and prevent lateral thermal expansion through the terminal 340. Therefore, materials with large thermal expansion, such as tungsten, can also be used as conductor 350.

[0088] Preferably, the elastic upper part 331 can be filled with filler when it is fixed to the terminal 340. In this case, the elasticity may reduce the mitigation effect on thermal expansion deformation, but this part can be compensated by using a conductor 350 with a small coefficient of thermal expansion.

[0089] According to one embodiment, the plate-shaped member may include a high-frequency electrode, and the terminal may include a groove corresponding to the high-frequency electrode.

[0090] The high-frequency electrode clamps the wafer in the heater of the semiconductor manufacturing apparatus and serves as plasma ground. The terminal can contact the high-frequency electrode. The high-frequency electrode can be mesh, sheet, or paste in shape. Accordingly, the contact surface between the high-frequency electrode and the terminal may include a groove processed into the shape of the high-frequency electrode.

[0091] The groove portion is correspondingly provided with the high-frequency electrode, and the high-frequency electrode can be fitted into the groove portion for fixation. This brings the groove portion into contact with the high-frequency electrode, increasing the contact area between the terminal and the high-frequency electrode, thereby achieving stable connection and fixation.

[0092] FIG4 is a heater rod-shaped member for a semiconductor manufacturing apparatus according to an embodiment of the present invention. Referring to FIG4, a rod-shaped member made of nickel can be seen including a processing groove and a spiral support portion. According to the present invention, the rod-shaped member for supplying power to a hot wire or a high-frequency electrode may have an elastic upper portion, which is composed of a processing groove and a spiral support portion. This elastic portion can alleviate the deformation of the rod-shaped member or terminal due to thermal expansion and contraction at high temperatures, and is divided into an outer side and an inner side, the inner side of which a conductor of the same or different material as the elastic portion can be inserted or fixed. In addition, when applying a certain pressure to braze the terminals to join them, the force can be evenly distributed on the contact surface between the conductor and the terminal, reducing the imbalance of the joint surface.

[0093] In summary, the embodiments have been described with reference to the limited accompanying drawings. Those skilled in the art can make various modifications and variations based on the description. For example, appropriate results can be obtained by performing the described techniques in a different order than the described methods, and / or by combining or integrating the described constituent elements in a different form than the described methods, or by replacing or substituting them with other constituent elements or equivalents.

[0094] Therefore, other embodiments, other implementations and equivalents of the claims are all within the scope of the appended patent applications. [Simplified Explanation of the Diagram]

[0095] Figure 1 is a structural diagram of a heater used in a conventional semiconductor manufacturing apparatus.

[0096] FIG2 is a schematic cross-sectional view of the heater rod member for the semiconductor manufacturing apparatus of the present invention.

[0097] FIG3 is a schematic cross-sectional view of a heater terminal for a semiconductor manufacturing apparatus according to the present invention.

[0098] Figure 4 is a heater rod-shaped member for a semiconductor manufacturing apparatus according to an embodiment of the present invention.

Claims

1. A heater rod-shaped member for a semiconductor manufacturing apparatus, wherein, A rod-shaped member that serves as a contact conductor and terminal for power supply includes an integrally formed upper part and a main body. The outer diameter of the upper part is equal to or smaller than the outer diameter of the main body. The upper part includes an internal space and a machining groove that extends through the outer and inner sides of the upper part.

2. The heater rod-shaped member for a semiconductor manufacturing apparatus as described in claim 1, wherein, Viewed from the upper cross section, the machining groove is asymmetrical with respect to the centerline of the rod-shaped member.

3. The heater rod-shaped member for a semiconductor manufacturing apparatus as described in claim 1, wherein, The gap between the top and bottom of the processing groove is smaller than the length of the top part.

4. The heater rod-shaped member for a semiconductor manufacturing apparatus as described in claim 1, wherein, The machining groove is machined into a spring shape based on the helical support.

5. The heater rod-shaped member for a semiconductor manufacturing apparatus as described in claim 4, wherein, The cross-section of the spiral support is a square, rectangle, polygon, trapezoid, or a polygon with at least one rounded corner (R part).

6. A heater terminal for a semiconductor manufacturing apparatus, wherein, include: A plate-like member including a hot wire; a rod-like member as described in claim 1, which supplies power to the hot wire; The rod-shaped member includes an upper portion and a body portion, and further includes a conductor formed in the upper portion of the rod-shaped member, wherein the conductor is fixed inside the upper portion of the rod-shaped member across the upper portion and contacts the terminal.

7. The heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The upper part is located between the contact surface that contacts the terminal and the bottom of the plate-like member.

8. The heater terminal for a semiconductor manufacturing apparatus as claimed in claim 6, wherein, The upper part is elastic when it expands due to heat.

9. A heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The upper part is the end of the main body that has been machined into a spring shape.

10. A heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The terminal is spherical or elliptical, and includes a groove for inserting the rod-like member.

11. The heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The conductor forms a contact layer on the contact surface between the rod and the terminal.

12. The heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The conductor is integrally formed with the rod-shaped member, and the conductor is made of the same material as the rod-shaped member.

13. The heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The conductor is separate from the rod-shaped member, and the material of the conductor may be the same as or different from that of the rod-shaped member.

14. The heater terminal for a semiconductor manufacturing apparatus as described in claim 6, wherein, The plate-shaped component includes a high-frequency electrode, and the terminal includes a recess corresponding to the high-frequency electrode.

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