Semiconductor apparatus, method for fabricating semiconductor device, and semiconductor device

Abstract

The disclosure relates to semiconductor processing, specifically an apparatus and methods for partially fabricating a semiconductor device using a cyclical deposition-etch process. The apparatus includes at least one reactor with a reaction chamber, a metal precursor source for delivering metal precursor vapor, and an etchant source for delivering etchant vapor. A vapor distribution and removal system supplies these vapors to the reaction chamber and removes them afterward. A sequence controller, connected to the distribution and removal system, includes a memory with a program that controls vapor flow from the metal precursor source during one or more deposition cycles.

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