Method for characterizing a donor substrate and / or piece of implantation equipment

Abstract

The invention relates to a method for characterizing a donor substrate, aiming to determine whether this donor substrate is likely to trigger the appearance of defects in a layer exfoliated by ion implantation. The characterizing method comprises an analysis by X-ray diffraction of a region of the front side of the donor substrate, after the donor substrate has been implanted, so as to produce digital angle-of-incidence / intensity data defining a diffraction pattern. The method also comprises a step of processing the diffraction pattern to deliver an indicator quantifying the risk of triggering the appearance of defects in an exfoliated layer of the donor substrate.

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