Method of manufacturing photomask
TW202641305APending Publication Date: 2026-10-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114118841
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-28
- Filing Date
- 2025-05-20
- Publication Date
- 2026-10-01
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Figure TWG2TA001078153_001 
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Abstract
An embodiment method of manufacturing a photomask includes depositing a first lower insulation portion of a first insulation structure over a substrate in a vertical direction and forming a first light blocking structure over the first lower insulation portion in the vertical direction, where the first lower insulation portion is between the first light blocking structure and the substrate. The method further includes depositing a first upper insulation portion of the first insulation structure covering at least an upper surface of the first light blocking structure. The first insulation structure and the first light blocking structure constitute a first mask pattern structure. One or more characteristics of the first light blocking structure, the first lower insulation portion, and the first upper insulation portion are configured such that an overall light transmittance of the first mask pattern structure along the vertical direction ranges from
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