Semiconductor device and method of manufacturing the same

Abstract

In some embodiments, a semiconductor structure including an interconnect structure disposed within a dielectric layer is provided. The interconnect structure includes a first lateral conductive portion extending in a first lateral direction and vertically between a lower conductive layer and an upper conductive layer, and a vertical conductive portion extending in a vertical direction, from the lower conductive layer to the upper conductive layer, and laterally contacting the first lateral conductive portion in the first lateral direction.

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