Highly-effective ultrathin sputterable and tamper-resistant shields with metal-refractory alloy stacks

Abstract

A method may include forming, on a semiconductor device, a first layer may include a first material configured to prevent transmission of electromagnetic radiation (EMR) through at least the first layer. The method may include forming, on the first layer, a second layer may include a nano amorphous material configured to prevent transmission EMR through at least the first layer and the second layer. The method may include forming, on the second layer, a third layer may include a third material configured to prevent transmission of EMR through at least the first layer, the second layer, and the third layer, where the first material, the nano amorphous material, and the third material are configured to maximize the internal reflection of the EMR between the first, second, and third layers.

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