Antenna packaging structure

TW202641369AActive Publication Date: 2026-10-01AU OPTRONICS CORP
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Patent Information

Application Number
TW114110260
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-19
Publication Date
2026-10-01
Estimated Expiration
2045-03-18

AI Technical Summary

Technical Problem

Conventional antenna packaging processes are complex due to the use of laser drilling and desmear processes that can damage thin-film organic layers, and stacked organic layers cause stress changes leading to warping.

Method used

An antenna packaging structure with an electrode layer, inorganic dielectric layers, and organic dielectric layers is designed, where the electrode layer has an acute angle, allowing for simplified fabrication and reduced warping by using inorganic dielectric layers that are less prone to damage and stress.

Benefits of technology

The structure simplifies manufacturing and reduces warping by minimizing damage to dielectric layers and stress, using inorganic dielectric layers that can withstand desmearing agents and provide better adhesion, thus enhancing the stability and reliability of the antenna package.

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Patent Text Reader

Abstract

An antenna packaging structure includes an antenna grounding electrode, a first circuit structure, at least one inorganic dielectric layer, at least one organic dielectric layer, a second circuit structure and a chip. The first circuit structure is disposed on the antenna ground electrode and includes a conductive layer. The at least one inorganic dielectric layer is disposed between the conductive layer of the first circuit structure and the antenna ground electrode. The antenna ground electrode, the first circuit structure and the at least one inorganic dielectric layer are arranged on a lower side of the at least one organic dielectric layer. At least one portion of the second circuit structure is disposed on an upper side of the at least one organic dielectric layer. The chip is disposed on the upper side of the at least one organic dielectric layer and is bonded to the at least a portion of the second circuit structure. An angle θ is formed between a side surface of the antenna ground electrode and a bottom surface of the antenna ground electrode in a material of the antenna ground electrode.
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Description

[Technical Field]

[0001] This invention relates to a packaging structure, and more particularly to an antenna packaging structure. [Previous Technology]

[0002] To reduce product size and increase product value, a redistribution layer process can be used to fabricate a multi-layer antenna structure and a chip circuit structure on the multi-layer antenna structure. Then, the chip and the chip circuit structure are bonded together to complete a small-volume antenna package structure.

[0003] In the conventional antenna packaging structure manufacturing process, a laser drilling process is used to drill through the polyimide (PI) layer of the antenna packaging structure, and a desmear process is used to clean the drilled hole. However, the chemicals used in the desmear process can damage the thin film organic layer located under the polyimide layer. Therefore, a photolithography process is required to form a thin film organic layer with openings, and a metal layer is formed before forming the polyimide layer to fill the openings in the thin film organic layer and avoid damage to the thin film organic layer by the desmear chemicals. Therefore, the conventional antenna packaging structure manufacturing process is relatively complex. In addition, the use of stacked organic layers will cause stress changes during the thermal process, making the antenna packaging structure prone to warping problems. [Summary of the Invention]

[0004] The present invention provides an antenna packaging structure that is simple to manufacture and is not prone to excessive warping.

[0005] The antenna packaging structure of the present invention includes an electrode layer, a first circuit structure, at least one inorganic dielectric layer, at least one organic dielectric layer, a second circuit structure, and a wafer. The first circuit structure is disposed on the electrode layer and includes a conductive layer. At least one inorganic dielectric layer is disposed between the conductive layer of the first circuit structure and the electrode layer. The electrode layer, the first circuit structure, and at least one inorganic dielectric layer are disposed on the underside of the at least one organic dielectric layer. At least a portion of the second circuit structure is disposed on the upper side of the at least one organic dielectric layer. The wafer is disposed on the upper side of the at least one organic dielectric layer and is bonded to at least a portion of the second circuit structure. The electrode layer has opposing upper surfaces, lower surfaces, and side surfaces. The upper surface of the electrode layer is located between the at least one inorganic dielectric layer and the lower surface of the electrode layer. The side surface of the electrode layer connects the upper surface of the electrode layer and the lower surface of the electrode layer. The side surface of the electrode layer and the lower surface of the electrode layer are separated by an angle θ within the material of the electrode layer. 0° < θ < 90°.

Implementation Method

[0006] Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same element symbols are used in the drawings and description to denote the same or similar parts.

[0007] It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected" to another element, it may be directly on or connected to the other element, or an intermediate element may also be present. Conversely, when an element is referred to as being "directly on" or "directly connected" to another element, no intermediate element is present. As used herein, "connection" may refer to a physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" may mean the presence of other elements between the two elements.

[0008] As used herein, “about,” “approximately,” or “substantially” includes the value and the average value within an acceptable range of deviations from a particular value as determined by one of ordinary skill in the art, taking into account the measurement in question and a particular number of errors associated with the measurement (i.e., limitations of the measurement system). For example, “about” may mean within one or more standard deviations of the value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, as used herein, “about,” “approximately,” or “substantially” may be used to select a more acceptable range of deviations or standard deviations depending on the optical, etched, or other properties, and not necessarily apply to all properties with a single standard deviation.

[0009] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having the same meaning as they have in the context of the relevant technology and the present invention, and will not be interpreted as having an idealized or overly formal meaning unless expressly defined herein.

[0010] Figure 1 is a cross-sectional schematic diagram of an antenna packaging structure according to an embodiment of the present invention. Referring to Figure 1, the antenna packaging structure 10 includes an electrode layer 110, a first circuit structure 120, and at least one inorganic dielectric layer 130. The first circuit structure 120 is disposed on the electrode layer 110 and includes a conductive layer 124. At least one inorganic dielectric layer 130 is disposed between the conductive layer 124 of the first circuit structure 120 and the electrode layer 110. In some embodiments, the electrode layer 110 includes an antenna ground electrode.

[0011] In some embodiments, the first circuit structure 120 may further include another conductive layer 122, wherein the other conductive layer 122 is disposed on the electrode layer 110, at least one inorganic dielectric layer 130 covers the other conductive layer 122, a conductive layer 124 is disposed on at least one inorganic dielectric layer 130, and at least one inorganic dielectric layer 130 is located between the conductive layer 124 and the other conductive layer 122. For example, in some embodiments, conductive layer 122 may include a first portion 122a and a second portion 122b, the first portion 122a of conductive layer 122 being electrically connected to electrode layer 110, and the second portion 122b of conductive layer 122 being spaced apart from the first portion 122a of conductive layer 122 and electrode layer 110; another conductive layer 124 may include a first portion 124a and a second portion 124b, the first portion 124a of another conductive layer 124 being electrically connected to the first portion 122a of conductive layer 122, and the second portion 124b of another conductive layer 124 being electrically connected to the second portion 122b of conductive layer 122 and spaced apart from the first portion 124a of another conductive layer 124.

[0012] In some embodiments, at least one inorganic dielectric layer 130 may selectively include a first inorganic dielectric layer 132 and a second inorganic dielectric layer 134 disposed on the first inorganic dielectric layer 132. That is, in some embodiments, the number of inorganic dielectric layers 130 disposed between the conductive layer 124 and the electrode layer 110 of the first circuit structure 120 may selectively be 2. However, the present invention is not limited thereto, and the number of inorganic dielectric layers 130 disposed between the conductive layer 124 and the electrode layer 110 may also be less than 2 or other positive integers greater than 2. In some embodiments, the antenna packaging structure 10 may further include a third inorganic dielectric layer 140 disposed on the second inorganic dielectric layer 134 and covering the uppermost conductive layer 124 of the first circuit structure 120.

[0013] The electrode layer 110 has an opposing upper surface 110a, a lower surface 110b, and a side surface 110c. The upper surface 110a of the electrode layer 110 is located between at least one inorganic dielectric layer 130 and the lower surface 110b of the electrode layer 110. The side surface 110c of the electrode layer 110 connects the upper surface 110a and the lower surface 110b of the electrode layer 110. In some embodiments, the antenna packaging structure 10 further includes a conductive connection layer 150 conformally covering the upper surface 110a and the side surface 110c of the electrode layer 110, wherein the material of the conductive connection layer 150 is different from the material of the electrode layer 110. Furthermore, the adhesion between the material of the conductive connection layer 150 and the material of the inorganic dielectric layer 130 is greater than the adhesion between the material of the electrode layer 110 and the material of the inorganic dielectric layer 130. The conductive connection layer 150 can be used to enhance the adhesion to the inorganic dielectric layer 130 and protect the electrode layer 110.

[0014] Figures 2A to 2E are partial cross-sectional schematic diagrams of the manufacturing process of an antenna packaging structure according to an embodiment of the present invention. Figures 2A to 2E correspond to part R in Figure 1. The following examples, in conjunction with Figures 2A to 2E, illustrate the manufacturing process of the electrode layer 110, conductive connection layer 150, first inorganic dielectric layer 132, second inorganic dielectric layer 134, and third inorganic dielectric layer 140 before laser drilling.

[0015] Referring to FIG2A, in some embodiments, a seed layer SLD can be formed first, and then an electroplated layer PTL can be electroplated on the seed layer SLD. Referring to FIG2A and FIG2B, a first photoresist pattern PR1 is then formed on the electroplated layer PTL. Then, the seed layer SLD and the electroplated layer PTL are patterned simultaneously using the first photoresist pattern PR1 as a mask to form a seed pattern layer SLD' and an electroplated pattern layer PTL' that are stacked and aligned with each other. The stacked structure of the seed pattern layer SLD' and the electroplated pattern layer PTL' can form an electrode layer 110. After the electrode layer 110 is formed, the first photoresist pattern PR1 can be removed.

[0016] Referring to Figures 1 and 2B, the side surface 110c and the lower surface 110b of the electrode layer 110 are separated by an angle θ within the material of the electrode layer 110. Since the electrode layer 110 is formed by using a first photoresist pattern PR1 as a mask patterning seed layer SLD and an electroplated layer PTL, 0° < θ < 90°. For example, in some embodiments, it is preferred that 40° ≤ θ ≤ 60°, but the present invention is not limited thereto. In some embodiments, the material of the electrode layer 110 includes, for example, copper, but the present invention is not limited thereto.

[0017] Referring to Figures 1 and 2C, a conductive connection material layer 150' is then formed on the electrode layer 110. Referring to Figures 1, 2C, and 2D, a second photoresist pattern PR2 is then formed on the conductive connection material layer 150', and the conductive connection material layer 150' is patterned using the second photoresist pattern PR2 as a mask to form the conductive connection layer 150. Then, the second photoresist pattern PR2 is removed. In some embodiments, when viewed along the direction z perpendicular to the upper surface 110a of the electrode layer 110, it can be observed that the shape of the conductive connection layer 150 is substantially the same as the shape of the electrode layer 110. Since the conductive connection layer 150 is formed using chemical vapor deposition, while the electrode layer 110 is formed using electroplating, the thickness T150 of the conductive connection layer 150 will be less than the thickness T110 of the electrode layer 110. For example, in some embodiments, the material of the conductive connection layer 150 may include, for example, titanium, aluminum, indium, tin, or oxides of at least one of titanium, aluminum, indium, and tin. For example, in some embodiments, the thickness T150 of the conductive interconnect layer 150 may fall within the range of 0.02 μm to 0.2 μm, but the present invention is not limited thereto.

[0018] Referring to Figures 2D and 2E, a first inorganic dielectric layer 132, a second inorganic dielectric layer 134, and a third inorganic dielectric layer 140 are then formed sequentially to cover the conductive connection layer 150 and the electrode layer 110. In some embodiments, the first inorganic dielectric layer 132, the second inorganic dielectric layer 134, and the third inorganic dielectric layer 140 can be formed using a silicon-based chemical vapor deposition (CVD) process. In some embodiments, the materials of the inorganic dielectric layer 130 and the third inorganic dielectric layer 140 may include silicon-containing inorganic materials, such as, but not limited to, silicon oxide, silicon nitride, silicon oxynitride, or a stack of at least two of the above materials. The first inorganic dielectric layer 132, the second inorganic dielectric layer 134, and the third inorganic dielectric layer 140 have thicknesses T132, T134, and T140, respectively. For example, in some embodiments, each of the thicknesses T132, T134, and T140 may fall within the range of 100 nm to 1 μm, but the present invention is not limited thereto. In some embodiments, the sum of the thicknesses T132, T134, and T140 may fall within the range of 1 μm to 3 μm, but the present invention is not limited thereto.

[0019] Referring to Figure 1, the antenna packaging structure 10 further includes at least one organic dielectric layer 160 and a second circuit structure 170. The electrode layer 110, the first circuit structure 120, and at least one inorganic dielectric layer 130 are disposed on the underside of the at least one organic dielectric layer 160. At least a portion 174g of the second circuit structure 170 is disposed on the upper side of the at least one organic dielectric layer 160. Specifically, in some embodiments, at least one organic dielectric layer 160 may include a first organic dielectric layer 162 and a second organic dielectric layer 164, and the second circuit structure 170 may include a third conductive layer 172 and a fourth conductive layer 174. The first organic dielectric layer 162 is disposed on the third inorganic dielectric layer 140, the third conductive layer 172 of the second circuit structure 170 is disposed on the first organic dielectric layer 162, the second organic dielectric layer 164 is disposed on the first organic dielectric layer 162 and covers the third conductive layer 172, and the fourth conductive layer 174 of the second circuit structure 170 is disposed on the second organic dielectric layer 164.

[0020] In some embodiments, the third conductive layer 172 of the second circuit structure 170 may selectively include a feed line 172a and an RF ground electrode 172b, and the fourth conductive layer 174 of the second circuit structure 170 may selectively include an RF output electrode 174a, an RF input electrode 174c, a power supply line 174d and a pad 174e, wherein the RF output electrode 174a is electrically connected to the feed line 172a, and the pad 174e is electrically connected to the second portion 124b of the conductive layer 124 of the first circuit structure 120.

[0021] For example, in some embodiments, the material of at least one organic dielectric layer 160 may include polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polyether sulfone (PES), or polyarylate, or other suitable materials, or combinations of at least two of the foregoing materials, but the present invention is not limited thereto.

[0022] Referring to Figure 1, the antenna package structure 10 further includes a chip 180 disposed on the upper side of at least one organic dielectric layer 160 and bonded to at least a portion of the second circuit structure 170. For example, in some embodiments, the chip 180 is disposed on the fourth conductive layer 174 of the second circuit structure 170 and bonded to at least the RF output electrode 174a and the RF input electrode 174c of the fourth conductive layer 174.

[0023] In the fabrication process of the antenna packaging structure 10, after forming the inorganic dielectric layer 130, the third inorganic dielectric layer 140, and the organic dielectric layer 160, a laser drilling process can be performed on the inorganic dielectric layer 130, the third inorganic dielectric layer 140, and the organic dielectric layer 160 simultaneously to form a hole h. Then, a fourth conductive layer 174 of the second circuit structure 170 can be formed on the organic dielectric layer 160. A portion of the fourth conductive layer 174 fills the hole h to form a conductive via 174f. The conductive via 174f is disposed in the organic dielectric layer 160, the inorganic dielectric layer 130, and the third inorganic dielectric layer 140, and electrically connects a portion 174g of the second circuit structure 170 to the electrode layer 110. In particular, the conductive via 174f is integrally formed.

[0024] It is worth mentioning that, since the angle θ of the electrode layer 110 is an acute angle, a thinner inorganic dielectric layer 130 can be used for the dielectric layer formed on the electrode layer 110 without the problem that the inorganic dielectric layer 130 cannot fill the gap between the side 110c of the electrode layer 110 and the underlying substrate (not shown). Since the dielectric layer disposed between the electrode layer 110 and the organic dielectric layer 160 is the inorganic dielectric layer 130, when the desmear process is used to clean the hole h, the desmearing solution is less likely to attack the dielectric layer (i.e., the inorganic dielectric layer 130) between the electrode layer 110 and the organic dielectric layer 160. In addition, the inorganic dielectric layer 130 also has the effect of reducing stress, reducing warpage, and blocking moisture. For example, the warpage of a conventional antenna package structure is 1 mm, while the warpage of the antenna package structure 10 in this embodiment can be reduced to 0.5 mm.

[0025] Furthermore, in some embodiments, during the fabrication process of the antenna packaging structure 10, laser drilling can be performed simultaneously on the inorganic dielectric layer 130 and the organic dielectric layer 160 to form a hole h. Then, the fourth conductive layer 174 can be formed again, allowing electrical connection to the electrode layer 110 via continuous conductive vias 174f, without the need to form multiple conductive layers in segments for electrical connection to the electrode layer 110. This reduces the number of photomasks used and the number of conductive layers fabricated, thereby simplifying the fabrication process of the antenna packaging structure 10. [Simplified Explanation of the Diagram]

[0026] Figure 1 is a cross-sectional schematic diagram of an antenna packaging structure according to an embodiment of the present invention. Figures 2A to 2E are cross-sectional schematic diagrams of a portion of the manufacturing process of an antenna packaging structure according to an embodiment of the present invention.

Claims

1. An antenna packaging structure, comprising: One electrode layer; A first circuit structure is disposed on the electrode layer and includes a conductive layer; At least one inorganic dielectric layer is disposed between the conductive layer and the electrode layer of the first circuit structure; at least one organic dielectric layer is disposed below the at least one organic dielectric layer; a second circuit structure is disposed above the at least one organic dielectric layer. And a wafer disposed on the upper side of the at least one organic dielectric layer and bonded to at least a portion of the second circuit structure; wherein, the electrode layer has an upper surface, a lower surface and a side surface opposite to each other, the upper surface of the electrode layer is located between the at least one inorganic dielectric layer and the lower surface of the electrode layer, the side surface of the electrode layer connects the upper surface of the electrode layer and the lower surface of the electrode layer, and the side surface of the electrode layer and the lower surface of the electrode layer are separated by an angle θ within the material of the electrode layer, and 0° < θ < 90°; And a conductive connection layer conformally covering the upper surface and the side surface of the electrode layer.

2. The antenna packaging structure as described in claim 1, wherein 40° ≤ θ ≤ 60°.

3. The antenna packaging structure as described in claim 1, wherein a material of the conductive connection layer is different from a material of the electrode layer.

4. The antenna packaging structure as claimed in claim 3, wherein the adhesion between the material of the conductive connection layer and the material of the at least one inorganic dielectric layer is greater than the adhesion between the material of the electrode layer and the material of the at least one inorganic dielectric layer.

5. The antenna packaging structure as claimed in claim 3, wherein the material of the electrode layer includes copper; the material of the at least one inorganic dielectric layer includes a silicon-containing inorganic material; and the material of the conductive connection layer includes an oxide of titanium, aluminum, indium, tin, or at least one of titanium, aluminum, indium, and tin.

6. The antenna packaging structure as claimed in claim 3, wherein the shape of the conductive connection layer is substantially the same as the shape of the electrode layer.

7. The antenna packaging structure as described in claim 1, further comprising: A conductive via is disposed in the at least one organic dielectric layer and the at least one inorganic dielectric layer, and electrically connects a portion of the second circuit structure to the electrode layer, wherein the conductive via is integrally formed.

8. The antenna packaging structure as claimed in claim 1, wherein the first circuit structure further comprises: Another conductive layer is disposed on the electrode layer, wherein the at least one inorganic dielectric layer covers the other conductive layer, the conductive layer is disposed on the at least one inorganic dielectric layer, and the at least one inorganic dielectric layer is located between the conductive layer and the other conductive layer.

9. The antenna packaging structure as claimed in claim 8, wherein the conductive layer includes a first portion and a second portion, the first portion of the conductive layer being electrically connected to the electrode layer, and the second portion of the conductive layer being spaced apart from the first portion of the conductive layer and the electrode layer.

10. The antenna packaging structure of claim 9, wherein the other conductive layer includes a first portion and a second portion, the first portion of the other conductive layer being electrically connected to the first portion of the conductive layer, and the second portion of the other conductive layer being electrically connected to the second portion of the conductive layer and spaced apart from the first portion of the other conductive layer.