Semiconductor devices and methods for manufacturing semiconductor devices

TW202641373APending Publication Date: 2026-10-01KIOXIA CORP
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Patent Information

Application Number
TW115121529
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-02-21
Filing Date
2024-02-21
Publication Date
2026-10-01

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Abstract

This invention provides a semiconductor device capable of suppressing useless regions in a wafer on which semiconductor elements are formed, and a method for manufacturing the semiconductor device. One embodiment of the semiconductor device includes: a first semiconductor wafer having a first upper surface on which a first electrode pad is formed; and a second semiconductor wafer having: a first lower surface on which a second electrode pad is formed, directly bonded to the first electrode pad; and a second upper surface on which a third electrode pad is formed, opposite to the first lower surface; the area of ​​the first lower surface is smaller than the area of ​​the first upper surface, and the center of gravity of the first lower surface and the center of gravity of the first upper surface are located at different positions in the in-plane direction of the first upper surface.
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