Semiconductor device structure, preparation method thereof and chip

Abstract

The invention discloses a semiconductor device structure, a preparation method thereof and a chip, and belongs to the technical field of semiconductor devices. The semiconductor device structure comprises a gold-silver alloy bump and a UBM layer, and the UBM layer is composed of a seed layer, a diffusion barrier layer and an adhesion layer or composed of the diffusion barrier layer and the adhesion layer. The diffusion barrier layer is composed of a platinum group element simple substance and / or an alloy containing a platinum group element, preferably composed of platinum, rhodium, iridium or an alloy thereof; the bottom of the gold-silver alloy bump is connected with the seed layer or the diffusion barrier layer, and the adhesion layer is connected with a chip electrode. By improving the UBM layer, the combination reliability of the gold-silver alloy bump and the UBM layer is improved, the obtained semiconductor device structure can pass a high-end chip reliability test, and a flip chip is prepared by replacing gold with gold-silver alloy.

Images