Semiconductor devices and forming method thereof

Abstract

A structure has a conductive via connecting a RDL and an interconnect structure and a method of forming the structure. The structure can include a conductive line in a substrate and a dielectric layer on the conductive line. The structure can further include the conductive via through the dielectric layer and in contact with the conductive line. The conductive via can include a first barrier layer on a side surface of the dielectric layer, a seed layer on the first barrier layer, and a conductive layer surrounded by the seed layer. Top surfaces of the conductive via and the dielectric layer can be substantially coplanar. The structure can further include a second barrier layer on the conductive via and the dielectric layer and a redistribution line (RDL) on the second barrier layer. The RDL can have a substantially even top surface free from irregular concave shapes.

Images