Bonded semiconductor groups in stacked memory architectures

Abstract

Methods, systems, and devices for bonded semiconductor groups in stacked memory architectures are described. A first semiconductor component may include first circuitry, first contacts formed of a first conductive material, and second contacts formed of a second conductive material. A second semiconductor component may include second circuitry, third contacts, and fourth contacts formed of the first conductive material. The second semiconductor component may be bonded with the first semiconductor component based on the first contacts and the third contacts. A third semiconductor component may include third circuitry, fifth contacts formed of the first conductive material, and sixth contacts formed of a third conductive material. The third semiconductor component may be bonded with the second semiconductor component based on the fifth contacts and the fourth contacts. The second contacts and the sixth contacts may support connections of the first, second, and third semiconductor components with other components.

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