Composition for forming resist underlayer film and method for manufacturing semiconductor substrate

TW202641882APending Publication Date: 2026-10-16JSR CORPORATION
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Patent Information

Application Number
TW115109351
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-31
Filing Date
2026-03-13
Publication Date
2026-10-16

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Abstract

This invention provides a resist underlayer film forming composition capable of forming a resist underlayer film with excellent pattern rectangularity and pattern peeling inhibition, and a method for manufacturing a semiconductor substrate. A resist underlayer film forming composition comprises a polymer and a solvent. The polymer comprises a repeating unit (I) having at least one monovalent group (X) selected from the group represented by formula (2-1), formula (2-2), formula (2-3), formula (2-4), formula (2-5), formula (2-6), formula (2-7), and formula (2-8), and at least: the polymer comprises a repeating unit (II) containing an onium salt structure having a crosslinking forming group; or the resist underlayer film forming composition further contains an onium salt compound having a crosslinking forming group.
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