Manufacturing method of semiconductor device, temporary bonding of semiconductor device, and composition of temporary bonding agent.

Abstract

A method for manufacturing a semiconductor device is provided, comprising a temporary adhesive layer forming stage in which a temporary adhesive layer of a temporary adhesive composition is formed on one side of a support; a viscosity increasing stage in which the viscosity of the temporary adhesive layer is increased; a configuration stage in which a plurality of pre-processing devices, serving as semiconductor devices before processing, are configured on the temporary adhesive layer with increased viscosity; a processing stage in which the pre-processing devices are processed to obtain a semiconductor device; and a peeling stage in which the semiconductor device is peeled off from the support. A temporary adhesive semiconductor device is provided, comprising a support, a temporary adhesive layer formed on one side of the support, and a pre-processing device, serving as a semiconductor device before processing, configured on the temporary adhesive layer, wherein the density of bubbles with a maximum diameter of 10 μm or more in the cross-section of the temporary adhesive layer perpendicular to the support is 3 bubbles / mm² or less.

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