bonding wires and semiconductor devices

Abstract

The objective of this invention is to improve the sulfur resistance of a bonding wire, which is formed by providing a coating layer with Au as the main component on the surface of a core material mainly composed of Ag. The bonding wire W of this invention comprises: a core material 10 containing at least Ag and Au, with Ag as the main component; and a coating layer 12 disposed on the surface of the core material 10, containing Au as the main component; the core material 10 contains 20% by mass or more and 50% by mass of Au, and the ratio (t / ϕ) of the thickness t of the coating layer 12 to the diameter ϕ of the core material 10 is 0.0009 or more and 0.0095 or less.

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