Method for depositing thin film and batch-type substrate processing apparatus

Abstract

The present disclosure relates to a method for depositing a thin film and a batch-type substrate processing apparatus, in which impurities existing on the thin film are effectively minimized. A method for depositing a thin film according to an embodiment of the present disclosure includes a first process of providing a substrate to a process space, a second process of supplying a source gas including a metal element to the process space, a third process of supplying hydrogen ions or hydrogen radicals to the process space, and a fourth process of supplying a reaction gas including an element that reacts with the metal element to the process space.

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