Method for pulling a single crystal of silicon according to the czochralski technique

Abstract

Method for pulling a single crystal of silicon according to the Czochralski technique, comprising the following steps in this order: (i) the providing of a crucible containing a silicon melt and of a seed crystal of monocrystalline silicon over the silicon melt, wherein the silicon melt comprises at least one dopant selected from the group of phosphorus, arsenic and antimony; (ii) the lowering of the seed crystal until contact is produced between the seed crystal and the surface of the silicon melt; (iii) the pulling of a single crystal by lifting the seed crystal with rotation, wherein a portion with increasing diameter and then a portion with a target diameter of not less than

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